Transient Analytical Model of High-Voltage and High-Power IGBT Device Based on Nondual Relationship for the Switching Process
IEEE transactions on power electronics March 1, 2023 Bin Hao, Yixuan Yang, Xinling Tang et al. 9 citations
This letter focuses on the accurate simulation of the turn-off current for high-voltage and high-power IGBT devices and proposes a modeling method of transient analysis model (TAM) for IGBT devices based on the nondual relationship of the switching process. Combined with the structural features of the IGBT chip, the carrier storage effect is analyzed and the analytical expression of di/dt...