Transient Analytical Model of High-Voltage and High-Power IGBT Device Based on Nondual Relationship for the Switching Process
Bin Hao, Yixuan Yang, Xinling Tang, Zhibin Zhao
IEEE transactions on power electronics March 1, 2023 DOI: 10.1109/tpel.2022.3219258 (opens in new tab) via Semantic Scholar
Summary
AI-generated from the abstractA new modeling method for high-voltage, high-power IGBT devices improves the accuracy of turn-off current simulation. By analyzing the carrier storage effect and correcting the analytical expression of di/dt during turn-off, the proposed transient analysis model (TAM) based on a nondual relationship of the switching process achieves much better accuracy than existing dual modeling methods.
Study at a glance
| Characteristics | Theoretical or methodological paper Peer reviewed |
|---|---|
| Keywords | Engineering Physics |
| Citations | 9 |
| Key finding | Proposes that a nondual modeling method improves the accuracy of di/dt simulation during IGBT turn-off compared to dual modeling methods. |
Abstract
This letter focuses on the accurate simulation of the turn-off current for high-voltage and high-power IGBT devices and proposes a modeling method of transient analysis model (TAM) for IGBT devices based on the nondual relationship of the switching process. Combined with the structural features of the IGBT chip, the carrier storage effect is analyzed and the analytical expression of di/dt during the turn-off process is corrected. Compared with the existing dual modeling methods, the accuracy of the nondual modeling method for di/dt during the turn-off process has been greatly improved.